Title :
Electrical contacts and degradation mechanisms
Author :
Fecht, H.J. ; Mrosk, J.W. ; Werner, M.
Author_Institution :
Ulm Univ., Germany
fDate :
6/21/1905 12:00:00 AM
Abstract :
The proper choice of a metal for contact to a semiconductor (e.g. Si, GaAs, SiC, diamond at high temperatures) or oxide (piezoelectric substrate) is a major challenge, in particular for the design and fabrication of integrated circuits. As device dimensions in very large scale integration (VLSI) nowadays approach submicrometer scales only limited penetration of the metal into the semiconductor in the range of several nanometers can be accepted. An overview will be given regarding some basic materials issues for contact materials in particular considering the degradation at high temperatures
Keywords :
VLSI; diffusion barriers; electrical contacts; high-temperature electronics; integrated circuit metallisation; integrated circuit reliability; semiconductor-metal boundaries; surface acoustic wave devices; C; GaAs; IC design; IC fabrication; SAW devices; Si; SiC; VLSI; diamond; diffusion barriers; electrical contacts; high temperature degradation mechanisms; high temperature electronics; limited metal penetration; materials issues; metal oxide contact; metallization schemes; overview; piezoelectric substrate; semiconductor metal contacts; Artificial intelligence; Bonding; Conductivity; Contacts; Degradation; Integrated circuit interconnections; Semiconductor device manufacture; Silicon carbide; Substrates; Temperature;
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
DOI :
10.1109/HITEN.1999.827483
