DocumentCode
1692422
Title
Temperature dependence of avalanche breakdown in GaAs p-i-n diodes
Author
David, J.P.R. ; Ghin, R. ; Plimmer, S.A. ; Rees, G.J. ; Grey, R.
Author_Institution
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
187
Lastpage
190
Abstract
We investigate the changes to the avalanche multiplication and breakdown voltage in a series of epitaxially grown GaAs p-i-n diodes with nominal intrinsic region thicknesses of 1μm, 0.5μm and O.1μm, over the temperature range 20K-500K
Keywords
III-V semiconductors; avalanche breakdown; gallium arsenide; high-temperature electronics; p-i-n diodes; semiconductor device breakdown; 0.1 mum; 0.5 mum; 1 mum; 20 to 500 K; GaAs; GaAs p-i-n diodes; avalanche breakdown; avalanche multiplication; breakdown voltage; epitaxially grown layers; temperature dependence; Avalanche breakdown; Capacitance-voltage characteristics; Dark current; Gallium arsenide; Leakage current; P-i-n diodes; Photoconductivity; Temperature dependence; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location
Berlin
Print_ISBN
0-7803-5795-7
Type
conf
DOI
10.1109/HITEN.1999.827492
Filename
827492
Link To Document