DocumentCode :
1692539
Title :
The vertical voltage termination technique — Characterizations of single die multiple 600V power devices
Author :
Vladimirova, Kremena ; Crebier, Jean-Christophe ; Schaeffer, Christian ; Constantin, Delphine
Author_Institution :
Grenoble Electr. Eng. Lab. (G2Elab), St. Martin d´´Hères, France
fYear :
2011
Firstpage :
204
Lastpage :
207
Abstract :
Deep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept to integrate multiple vertical power devices on a common die. The concept is based on the creation of vertical deep trench terminations on the periphery of the devices, thus allowing to separate the drift regions and to completely insulate the multiple power devices sharing the same backside contact electrode. Power diodes in the range of 600V are fabricated and experimentally tested to validate the concept. The prototypes demonstrated excellent forward and reverse biased static characteristics.
Keywords :
electric breakdown; power semiconductor diodes; backside contact electrode; breakdown voltages; deep trench terminations; high voltage devices; power diodes; single die multiple power devices; vertical voltage termination technique; voltage 600 V; Leakage current; Metals; Probes; Silicon; Temperature; Temperature measurement; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
ISSN :
1943-653X
Print_ISBN :
978-1-4244-8425-6
Type :
conf
DOI :
10.1109/ISPSD.2011.5890826
Filename :
5890826
Link To Document :
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