Title :
MOSFET prediction in space environments
Author :
Shvetzov-Shilovsky, I.N.
Author_Institution :
Dept. of Microelectron., Moscow Eng. Phys. Inst., Russia
Abstract :
This paper describes the approach to the prediction of MOSFET response in space environments based on mathematical modeling. The parameters of the models are extracted from characteristics, obtained in laboratory tests, when transistors are irradiated at relatively high dose rates and then annealed. The results can be extrapolated to the range of dose rates, typical for space applications
Keywords :
MOSFET; X-ray effects; semiconductor device models; space vehicle electronics; MOSFET prediction; MOSFET response; anneal; high dose rates; irradiated devices; mathematical modeling; space environments; Circuit simulation; Circuit synthesis; Circuit testing; Electron traps; MOSFET circuits; Mathematical model; Predictive models; Simulated annealing; Space technology; Tunneling;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500862
