Title :
Drift design impact on quasi-saturation & HCI for scalable N-LDMOS
Author :
Shi, Yun ; Feilchenfeld, Natalie ; Phelps, Rick ; Levy, Max ; Knaipp, Martin ; Minixhofer, Rainer
Author_Institution :
Microelectron. Div., Analog & Mixed Signal Technol. Dev., IBM, Essex Junction, VT, USA
Abstract :
In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and fT characteristics. The STI depth sensitivity in DC, ac and HCI characteristics is investigated. The results prove a very robust design, featuring <;10% Idlin shift over 10 year lifetime for +/-10% STI depth variations.
Keywords :
CMOS integrated circuits; MOSFET; hot carriers; integrated circuit design; power integrated circuits; HCI characteristics; HV-CMOS technology; STI depth sensitivity; drift design impact; hot carrier injection; quasisaturation; robust design; scalable NLDMOS design; shallow trench isolation; size 0.18 mum; time 10 year; voltage 25 V; voltage 50 V; Degradation; Human computer interaction; JFETs; Kirk field collapse effect; Performance evaluation; Reliability; Sensitivity;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890829
