• DocumentCode
    1692623
  • Title

    Drift design impact on quasi-saturation & HCI for scalable N-LDMOS

  • Author

    Shi, Yun ; Feilchenfeld, Natalie ; Phelps, Rick ; Levy, Max ; Knaipp, Martin ; Minixhofer, Rainer

  • Author_Institution
    Microelectron. Div., Analog & Mixed Signal Technol. Dev., IBM, Essex Junction, VT, USA
  • fYear
    2011
  • Firstpage
    215
  • Lastpage
    218
  • Abstract
    In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and fT characteristics. The STI depth sensitivity in DC, ac and HCI characteristics is investigated. The results prove a very robust design, featuring <;10% Idlin shift over 10 year lifetime for +/-10% STI depth variations.
  • Keywords
    CMOS integrated circuits; MOSFET; hot carriers; integrated circuit design; power integrated circuits; HCI characteristics; HV-CMOS technology; STI depth sensitivity; drift design impact; hot carrier injection; quasisaturation; robust design; scalable NLDMOS design; shallow trench isolation; size 0.18 mum; time 10 year; voltage 25 V; voltage 50 V; Degradation; Human computer interaction; JFETs; Kirk field collapse effect; Performance evaluation; Reliability; Sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
  • Conference_Location
    San Diego, CA
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-8425-6
  • Type

    conf

  • DOI
    10.1109/ISPSD.2011.5890829
  • Filename
    5890829
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1692623