Title :
Small-signal gate-to-drain capacitance of MOSFET as a diagnostic tool for hot carriers induced degradation
Author :
Yeow, Y.T. ; Ghodsi, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queensland Univ., Qld., Australia
Abstract :
In this paper we describe a method for the study of hot-carrier induced charge centres in MOSFETs by gate-to-drain capacitance measurement. Numerical simulation of this capacitance is used to provide an understanding of the effects of these charge centres. Experimental results are presented and compared with the charge pumping measurement
Keywords :
MOSFET; capacitance measurement; hole traps; hot carriers; interface states; MOSFET; charge centres; diagnostic tool; hot carriers induced degradation; small-signal gate-to-drain capacitance; Capacitance measurement; Charge measurement; Charge pumps; Current measurement; Degradation; Hot carriers; Interface states; MOSFET circuits; Numerical simulation; Photonic band gap;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500865
