Assessment of nMOSFET degradation using three level charge pumping

The effect of injected electron energies during SHE stress has been investigated using the three level charge pumping technique. We find that interface state density increases throughout the band gap, with no dependence upon electron energy, whilst emission cross sections calculated from the three level charge pumping data remain essentially constant. Higher p-well biases lead to charge detrapping of states in the oxide bulk, and using this phenomenon we explain the effects of slow states on three level charge pumping