Title :
Border trap characterisation by measurements of current-voltage characteristics of MOS capacitors
Author :
Dimitrijev, Sima ; Tanner, Philip ; Yao, Z. Qiang ; Harrison, H.Barry
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Abstract :
Slow current transients in metal-oxide-semiconductor (MOS) capacitors have been observed and related to border traps (traps that are too slow to be classified as interface traps, and too fast to be classified as oxide traps). This paper describes border-trap related current transients induced by voltage stepping as a possible technique for both energy-level and time-response characterisation of the border traps. The voltage stepping measurements are compared to the standard linear voltage ramping technique
Keywords :
MOS capacitors; characteristics measurement; electron traps; electronic density of states; MOS capacitors; border trap characterisation; current-voltage characteristics; energy-level characterisation; linear voltage ramping technique; slow current transients; time-response characterisation; voltage stepping; Australia; Current measurement; Current-voltage characteristics; Delay effects; Dielectric substrates; MOS capacitors; Microelectronics; Silicon; Time measurement; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500867
