A CMOS 25.3 ppm°/C bandgap voltage reference using self-cascode composite transistor

Author

Colombo, Dalton ; Werle, Felipe ; Wirth, Gilson ; Bampi, Sergio

Author_Institution

Microelectron. Program (PGMICRO), Fed. Univ. of Rio Grande do Sul (UFRGS), Porto Alegre, Brazil

fYear

2012

Firstpage

1

Lastpage

4

Abstract

Voltage reference circuits, presented in battery-operated portable equipments, should be able to be designed using standard digital CMOS process and present low-power operation. This work presents a low-power CMOS Bandgap voltage reference that uses self-cascode composite transistors, only one resistor and none of the BJT´s from the device library. The output voltage is nearly the silicon bandgap voltage and its temperature coefficient is typically 25.3 ppm/°C in the temperature range of -40 to 85°C, while consuming a supply current of 25 μA. The circuit was designed using thick oxide transistors from a 130 nm CMOS process technology and the layout area is 100 μm × 100 μm.

Keywords

CMOS digital integrated circuits; MOSFET; elemental semiconductors; energy gap; integrated circuit design; portable instruments; reference circuits; resistors; silicon; battery operated portable equipments; current 25 muA; digital CMOS process; low-power CMOS bandgap voltage reference; resistor; self-cascode composite transistor; silicon bandgap voltage; size 130 nm; temperature -40 degC to 85 degC; temperature coefficient; thick oxide transistors; voltage reference circuits; CMOS integrated circuits; CMOS process; Fabrication; Photonic band gap; Resistors; Temperature distribution; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (LASCAS), 2012 IEEE Third Latin American Symposium on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4673-1207-3

Type

conf

DOI

10.1109/LASCAS.2012.6180360

Filename

6180360