Title :
Current test for CMOS early failures screening
Author :
Lisenker, Boris ; Nevo, Yosef
Author_Institution :
Tower Semicond. Ltd., Migdal Haemek, Israel
Abstract :
This paper discuss two methodologies for screening potential VLSI CMOS infant mortality failures, caused ether by the in-circuit components or the overall circuit performance degradation. The first is based on the direct input/output buffers leakage testing, the second employs the power supply current measurement, while no internal node states are toggling. Experimental data, showing strong correlation between rejected devices and early failure rate reduction is demonstrated. Finally, early failure screening technique, efficient both in cost ant time, utilizing existing test equipment is suggested for production testing as well as for process reliability monitoring
Keywords :
CMOS integrated circuits; VLSI; electric current measurement; failure analysis; integrated circuit manufacture; integrated circuit reliability; integrated circuit testing; leakage currents; production testing; CMOS early failures; VLSI CMOS infant mortality failures; circuit performance degradation; failure screening; in-circuit components; input/output buffers leakage testing; power supply current measurement; process reliability monitoring; production testing; Circuit optimization; Circuit testing; Costs; Current measurement; Current supplies; Degradation; Power supplies; Production; Test equipment; Very large scale integration;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500870
