DocumentCode
1692834
Title
Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors
Author
Pala, Vipindas ; Hella, Mona ; Chow, T. Paul
Author_Institution
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2011
Firstpage
243
Lastpage
246
Abstract
A study of the physical phenomena leading to second breakdown of AlGaAs/InGaAs/GaAs power HEMTs in high voltage and high current conditions is presented. The boundary of the safe operating area (SOA) is measured in both DC and pulsed conditions. The effect of gate de-biasing and triggering of the parasitic bipolar transistor are identified as reasons for deterioration of the SOA. A model for these effects is also presented.
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; power HEMT; power transistors; AlGaAs-InGaAs-GaAs; HEMT power transistors; gate de-biasing; gate triggering; parasitic bipolar transistor; pulsed conditions; safe operating area; second breakdown; Electric breakdown; Impact ionization; Logic gates; PHEMTs; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location
San Diego, CA
ISSN
1943-653X
Print_ISBN
978-1-4244-8425-6
Type
conf
DOI
10.1109/ISPSD.2011.5890836
Filename
5890836
Link To Document