The annealing behavior of oxide trapped charges and interface traps in fluorinated NMOSFETS

Author

Zhang, GUOQIANG ; Yan, RongIiang ; Ren, DIYUAN

Author_Institution

Xinjiang Inst. of Phys., Acad. Sinica, Urumqi, China

Volume

1

fYear

1995

Firstpage

269

Abstract

The gate bias annealing of threshold voltage, oxide trapped charges and interface traps in fluorinated n-channel MOSFETs has been investigated. The annealing rate of oxide trapped charge is correlated with the value of gate bias. The annealing of interface traps has a turnaround effect. Switching gate bias during anneal results in the creation and banishment of oxide trapped charges. The annealing saturation appear after a long term anneal. The radiation damage can be restrained in fluorinated MOS oxides. Gate bias has a more significant influence on the build-up and annealing of oxide trapped charges in fluorinated NMOSFETs

Keywords

MOSFET; annealing; electron traps; interface states; ion beam effects; annealing behavior; annealing rate; annealing saturation; fluorinated MOS oxides; fluorinated NMOSFETS; gate bias annealing; interface traps; n-channel MOSFET; oxide trapped charges; radiation damage; threshold voltage; Annealing; Density measurement; MOSFET circuits; Performance evaluation; Physics; Silicon; Switches; Temperature measurement; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1995. Proceedings., 1995 20th International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-2786-1

Type

conf

DOI

10.1109/ICMEL.1995.500878

Filename

500878