Title :
The annealing behavior of oxide trapped charges and interface traps in fluorinated NMOSFETS
Author :
Zhang, GUOQIANG ; Yan, RongIiang ; Ren, DIYUAN
Author_Institution :
Xinjiang Inst. of Phys., Acad. Sinica, Urumqi, China
Abstract :
The gate bias annealing of threshold voltage, oxide trapped charges and interface traps in fluorinated n-channel MOSFETs has been investigated. The annealing rate of oxide trapped charge is correlated with the value of gate bias. The annealing of interface traps has a turnaround effect. Switching gate bias during anneal results in the creation and banishment of oxide trapped charges. The annealing saturation appear after a long term anneal. The radiation damage can be restrained in fluorinated MOS oxides. Gate bias has a more significant influence on the build-up and annealing of oxide trapped charges in fluorinated NMOSFETs
Keywords :
MOSFET; annealing; electron traps; interface states; ion beam effects; annealing behavior; annealing rate; annealing saturation; fluorinated MOS oxides; fluorinated NMOSFETS; gate bias annealing; interface traps; n-channel MOSFET; oxide trapped charges; radiation damage; threshold voltage; Annealing; Density measurement; MOSFET circuits; Performance evaluation; Physics; Silicon; Switches; Temperature measurement; Testing; Threshold voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500878
