Title :
Production and characterization of cadmium-mercury-telluride photodiodes in 1.5-3.5 μm spectral range
Author :
Damnjanovic, Vesna ; Elazar, Jovan
Author_Institution :
Fac. of Mining & Geol., Belgrade Univ., Serbia
Abstract :
Photodiodes based on p-type monocrystal CdxHg1-x Te, with composition x between 0.3 and 0.5 suitable for the spectral range 1.5-3.5 μm, are produced. There are two methods of formation of the p-n junction: diffusion in mercury vapor and implantation by aluminum ions. Produced photodiodes have been tested for the following parameters: relative spectral response, current response, detectivity and response time
Keywords :
II-VI semiconductors; cadmium compounds; diffusion; ion implantation; mercury compounds; photodiodes; 1.5 to 3.5 micron; CdHgTe; cadmium-mercury-telluride; current response; detectivity; diffusion; ion implantation; p-n junction; p-type monocrystal; photodiode; response time; spectral response; Aluminum; Delay; Heating; Nitrogen; Optical fibers; P-n junctions; Photodiodes; Production; Silicon; Temperature distribution;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500880
