• DocumentCode
    1693020
  • Title

    Production and characterization of cadmium-mercury-telluride photodiodes in 1.5-3.5 μm spectral range

  • Author

    Damnjanovic, Vesna ; Elazar, Jovan

  • Author_Institution
    Fac. of Mining & Geol., Belgrade Univ., Serbia
  • Volume
    1
  • fYear
    1995
  • Firstpage
    277
  • Abstract
    Photodiodes based on p-type monocrystal CdxHg1-x Te, with composition x between 0.3 and 0.5 suitable for the spectral range 1.5-3.5 μm, are produced. There are two methods of formation of the p-n junction: diffusion in mercury vapor and implantation by aluminum ions. Produced photodiodes have been tested for the following parameters: relative spectral response, current response, detectivity and response time
  • Keywords
    II-VI semiconductors; cadmium compounds; diffusion; ion implantation; mercury compounds; photodiodes; 1.5 to 3.5 micron; CdHgTe; cadmium-mercury-telluride; current response; detectivity; diffusion; ion implantation; p-n junction; p-type monocrystal; photodiode; response time; spectral response; Aluminum; Delay; Heating; Nitrogen; Optical fibers; P-n junctions; Photodiodes; Production; Silicon; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500880
  • Filename
    500880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1693020