• DocumentCode
    1693025
  • Title

    GaN based Super HFETs over 700V using the polarization junction concept

  • Author

    Nakajima, Akira ; Dhyani, Mahesh H. ; Narayanan, E. M Sankara ; Sumida, Yasunobu ; Kawai, Hiroji

  • Author_Institution
    Dept. of EEE, Univ. of Sheffield, Sheffield, UK
  • fYear
    2011
  • Firstpage
    280
  • Lastpage
    283
  • Abstract
    GaN Super Heterojunction Field Effect Transistors (Super HFETs) based on the polarization junction (PJ) concept are demonstrated on Sapphire substrates. These Super HFETs were fabricated from a GaN/Al0.23Ga0.77N/GaN hetero structure with 2D hole and electron gas densities of 1.1×1013 and 9.7×1012 cm-2 at the respective hetero-interfaces. The Super HFETs show breakdown voltage above 700 V with on-resistances of 15 Ω·mm. In addition, the super HFETs have inherent body diodes and its reverse conducting characteristics are demonstrated.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas density; 2D hole gas density; Al2O3; GaN-Al0.23Ga0.77N-GaN; polarization junction concept; sapphire substrates; super HFET; super heterojunction field effect transistors; Aluminum gallium nitride; Electrodes; Gallium nitride; HEMTs; Logic gates; MODFETs; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
  • Conference_Location
    San Diego, CA
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-8425-6
  • Type

    conf

  • DOI
    10.1109/ISPSD.2011.5890845
  • Filename
    5890845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1693025