Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate

Author

Ikeda, Nariaki ; Tamura, Ryosuke ; Kokawa, Takuya ; Kambayashi, Hiroshi ; Sato, Yoshihiro ; Nomura, Takehiko ; Kato, Sadahiro

Author_Institution

Adv. Power Device Res. Assoc., Yokohama, Japan

fYear

2011

Firstpage

284

Lastpage

287

Abstract

In this study, normally-off GaN hybrid MOS-HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the breakdown voltage (Vb) was improved using a combination of a high-resistive carbon-doped back barrier layer and a thin channel layer of 50 nm. The specific on-resistance (RonA) was estimated to be less than 7.1 mΩcm² for Lgd = 12 μm, and Vb was estimated to be over 1.71 kV for Lgd = 18 μm. To our knowledge, these values are the best results ever reported for normally-off GaN-based MOSFETs.

Keywords

III-V semiconductors; MOSFET; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; Si; breakdown voltage; device characteristics; high-resistive carbon-doped back barrier layer; hybrid MOS-HFET; silicon substrate; size 4 inch; size 50 nm; specific on-resistance; Aluminum gallium nitride; Gallium nitride; HEMTs; Iron; Logic gates; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890846

Filename

5890846