• DocumentCode
    1693217
  • Title

    Energy limits for unclamped inductive switching in high-voltage planar and SuperJunction power MOSFETs

  • Author

    Roig, J. ; Moens, P. ; McDonald, J. ; Vanmeerbeek, P. ; Bauwens, F. ; Tack, M.

  • Author_Institution
    Power Technol. Centre, ON Semicond., Oudenaarde, Belgium
  • fYear
    2011
  • Firstpage
    312
  • Lastpage
    315
  • Abstract
    In this work the maximum UIS energy capability (Eas) for High-Voltage (600V-900V) Planar and SuperJunction (SJ) power MOSFETs is analyzed through experiment, TCAD simulation and analytical modeling. A new theoretical approach considering a buried heat source is presented to accurately predict Eas values in a wide range of voltage capability and load inductor values.
  • Keywords
    inductors; power MOSFET; technology CAD (electronics); TCAD simulation; UIS; analytical modeling; buried heat source; high-voltage planar power MOSFET; load inductor; superjunction power MOSFET; unclamped inductive switching; voltage 600 V to 900 V; Analytical models; Heating; MOSFETs; Neodymium; Power measurement; Silicon; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
  • Conference_Location
    San Diego, CA
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-8425-6
  • Type

    conf

  • DOI
    10.1109/ISPSD.2011.5890853
  • Filename
    5890853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1693217