• DocumentCode
    1693278
  • Title

    Leaky-mode effects in InAs quantum-dot infrared photodetectors coupled to metal photonic crystals

  • Author

    Lee, S.C. ; Sharma, Y. ; Krishna, S. ; Brueck, S.R.J.

  • Author_Institution
    Center for High Technol. Mater. & Electr. & Comput. Eng. Dept., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A metal photonic crystal integrated on the n+-doped top contact layer of an InAs quantum-dot infrared photodetector is investigated. The contact layer thickness impacts the photoresponse by the leaky mode characteristics of this antiguide structure.
  • Keywords
    III-V semiconductors; indium compounds; infrared detectors; photodetectors; photonic crystals; semiconductor quantum dots; InAs; InAs quantum-dot infrared photodetectors; antiguide structure; contact layer thickness; leaky-mode effects; metal photonic crystals; n+-doped top contact layer; photoresponse; Absorption; Gallium arsenide; Metals; Photonic crystals; Plasmons; Quantum dots; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6327177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1693278