Title :
Low loss static induction devices (transistors and thyristors)
Author :
Tadano, H. ; Ishiko, M. ; Kawaji, S. ; Taga, Y.
Author_Institution :
Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan
Abstract :
To decrease the power loss, the current gain of a Bipolar mode Static Induction Transistor (BSIT) is examined with quasi one dimensional analysis. The current gain dependence on source contact area is presented with experimental, analysis, and simulated results. With regard to the Static Induction Thyristor (SIThy), switching speed improvement methods are presented to reduce the switching loss of the device. A proton irradiation or a shorting method is a useful technique for decreasing the switching time and switching loss of SIThy
Keywords :
losses; power semiconductor switches; proton effects; static induction transistors; thyristors; bipolar mode SIT; current gain dependence; low loss static induction devices; power loss reduction; proton irradiation; quasi one dimensional analysis; shorting method; source contact area; static induction thyristor; static induction transistor; switching loss; switching speed improvement methods; switching time; Anodes; Charge carrier lifetime; Electrodes; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Switching frequency; Switching loss; Thyristors; Voltage control;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500892
