Title :
Design of vertical power MOSFETs in SiC
Author :
Pelaz, L. ; Marqués, L.A. ; Bailón, L. ; Barbolla, J.
Author_Institution :
Fac. de Ciencias, Valladolid Univ., Spain
Abstract :
Vertical MOSFETs have a good performance for high-power applications. However, silicon high-voltage devices run into a high on-resistance and a current limit due to the quasi-saturation regimen. Based on the intrinsic material properties, both of these limitations are notably improved in vertical MOSFETs made on SiC compared to those made on Si. In addition, SiC is more appropriate for high temperature operation. In this paper these aspects have been analyzed by simulation in order to compare the performance of SiC devices with that of Si devices and to establish the best operation range for each material
Keywords :
power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; high temperature operation; high-power applications; high-voltage devices; on-resistance; performance comparison; quasi-saturation regimen; simulation; vertical power MOSFETs; MOSFETs; Material properties; Medical simulation; Semiconductor device doping; Semiconductor device manufacture; Semiconductor materials; Semiconductor process modeling; Silicon carbide; Temperature; Thermal conductivity;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500893
