Title :
New modular high voltage LDMOS technology based on Deep Trench Isolation and 0.18um CMOS platform
Author :
Agam, Moshe ; Yao, Tingfeng ; Suwhanov, Agajan ; Myers, T. ; Ota, Yoshiharu ; Hose, Sallie ; Comard, Matt
Author_Institution :
ON Semicond., Gresham, OR, USA
Abstract :
This paper presents the challenges of integrating 70V and 45V lateral DMOS transistor modules into a 0.18um base line process. This integration is achieved with minimal impact on baseline process and circuit IP´s. Multi-epitaxial stack and Deep Trench Isolation (DTI) modules assure up to 140V isolation capability between different areas in the chip.
Keywords :
CMOS integrated circuits; MOSFET; isolation technology; CMOS platform; base line process; circuit IP; deep trench isolation; lateral DMOS transistor modules; modular high voltage LDMOS technology; multiepitaxial stack modules; size 0.18 mum; voltage 140 V; voltage 45 V; voltage 70 V; CMOS integrated circuits; Diffusion tensor imaging; Implants; MOSFET; Silicon; Stress; DTI; LDMOS; deep trench; dislocations; high power; multi layer epitaxial; proximity; stress;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2014.6846954
