Title :
The trench insulated gate bipolar transistor a high power switching device
Author :
Udrea, Florin ; Amaratunga, Gehan
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TEGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the trench IGBT over its conventional planar variant are highlighted. It is concluded that the trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices
Keywords :
electric breakdown; insulated gate bipolar transistors; losses; power semiconductor switches; HV MOS-controllable switching devices; SOA; accumulation layer injection; channel charge; channel density; high power switching device; insulated gate bipolar transistor; safe operating area; transversal electric field modulation; trench IGBT; Anodes; Cathodes; Doping; Electric resistance; Fabrication; Insulated gate bipolar transistors; Insulation; Laboratories; Power semiconductor devices; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500894
