Title :
Hot carrier degradation of HV-SOI devices under off-and on-state current conditions
Author :
van Dalen, R. ; Dhar, S. ; Heringa, A. ; Swanenberg, M.J. ; van der Wal, A.B. ; Boos, P.W.M. ; Braspenning-Girault, V.
Author_Institution :
NXP Res., Eindhoven, Netherlands
Abstract :
Optimisation of High Voltage (HV) devices is typically governed by life-time considerations, most notably requirements for sufficient immunity against Hot Carrier Injection (HCI). Based on insight in the different degradation mechanisms in HV-SOI, we have identified distinctive acceleration methodologies for on- and off-state stress conditions.
Keywords :
hot carriers; silicon-on-insulator; HV-SOI devices; acceleration methodology; high voltage device optimisation; hot carrier degradation; hot carrier injection; life-time consideration; off-state current condition; on-state current condition; Degradation; Hot carriers; Human computer interaction; Power semiconductor devices; Stress; Stress measurement; Temperature measurement;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890862
