• DocumentCode
    169352
  • Title

    Uniformity improvement for 200 mm APCVD epitaxial Si film by retrofit of Applied Materials Epi Centura

  • Author

    Kunle, Matthias ; Baumgartl, Johannes ; Ackermann, Thomas

  • Author_Institution
    Unit Process Dev., Infineon Technol. Austria AG, Villach, Austria
  • fYear
    2014
  • fDate
    19-21 May 2014
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    An upgrade kit for the 200 mm Applied Materials Epi Centura was released. The retrofit includes an alignment tool for the setup of the process kit, a motorized lift as well as a new susceptor design. The hardware parts were installed in an APCVD (Atmospheric Pressure Chemical Vapor Deposition) production tool and tested in a production environment. The upgrade kit enables a reduction of the total range (max-min value) of the epi film thickness profile and a stable repeatability of the deposition process. A qualitative assessment of the new hardware during the production of an electrical device was carried out by analyzing sigma values of a PCM (Process Control Monitoring) parameter which is highly sensitive to variations in the epi thickness. The sigma of the PCM parameter from several lots, processed prior to the retrofit of the chamber and processed in the same chamber in the retrofitted state were compared and a reduction of the sigma value was observed when using the upgrade kit for the epi deposition.
  • Keywords
    chemical vapour deposition; elemental semiconductors; maintenance engineering; minimax techniques; process control; semiconductor thin films; silicon; APCVD epitaxial Si film; PCM; Si; alignment tool; applied materials epi centura; atmospheric pressure chemical vapor deposition; electrical device; epi film thickness profile; max-min value; motorized lift; process control monitoring; process kit; production environment; production tool; qualitative assessment; retrofit; sigma values; size 200 mm; susceptor design; uniformity improvement; upgrade kit; Epitaxial growth; Hardware; Phase change materials; Production; Silicon; FTIR; chemical vapor deposition; silicon epitaxy; uniformity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
  • Conference_Location
    Saratoga Springs, NY
  • Type

    conf

  • DOI
    10.1109/ASMC.2014.6846961
  • Filename
    6846961