DocumentCode :
169361
Title :
Use of diodes to enable μLoop® test structures for buried defects and voltage to grayscale calibration
Author :
Patterson, Oliver D.
Author_Institution :
IBM, Hopewell Junction, NY, USA
fYear :
2014
fDate :
19-21 May 2014
Firstpage :
412
Lastpage :
416
Abstract :
Two test structures that address key problems for voltage contrast inspection are introduced. These structures both utilize diodes to provide unique capability. The first structure illustrates how a two-pass area accelerated inspection can be used for detection of buried defects such as gate shorts or via opens. Like standard μLoop® test structures, the first inspection pass is able to detect the existence of all the defects affecting the structure while only scanning a small fraction of the structure. The purpose of the second inspection pass is to look for physical signs of the defect, but none are generally visible for buried defects. The key to this structure is that diodes are used to indicate the location of the buried defect. The second structure is used to map voltage to grayscale. This structure takes advantage of the well-known fact that there is a 0.6V drop across a forward biased diode.
Keywords :
buried layers; inspection; semiconductor device testing; semiconductor diodes; μLoop test structures; buried defect detection; forward biased diode; grayscale calibration; two-pass area accelerated inspection; voltage 0.6 V; voltage contrast inspection; Gray-scale; Inspection; Junctions; Logic gates; Metals; Semiconductor diodes; Silicides; μLoop; Electron Beam Inspection (EBI); Voltage calibration; defect reduction; gray-scale calibration; scan rate; test structures;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Type :
conf
DOI :
10.1109/ASMC.2014.6846966
Filename :
6846966
Link To Document :
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