Title :
Physical properties of surface-barrier structure with microrelief semiconductor-metal interface
Author_Institution :
Inst. of Phys. of Semicond., Acad. of Sci., Kiev, Ukraine
Abstract :
The present report deals with experimental investigations of optical, electric and photoelectric properties of microrelief surfaces of III-V semiconductors and surfacer-barrier structures prepared on the basis of metal-semiconductor interfaces (Au-GaAs; Au, Ag-InP). The surface plasmon polariton excitation was shown to be an additional mechanism of the photosensitivity enhancement
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; photoconductivity; polaritons; semiconductor-metal boundaries; surface plasmons; Ag-InP; Au-GaAs; Au-InP; III-V semiconductors; electric properties; microrelief semiconductor-metal interfaces; optical properties; photoelectric properties; surface plasmon polaritons; surface-barrier structures; Anisotropic magnetoresistance; Etching; Gallium arsenide; Optical scattering; Optical surface waves; Rough surfaces; Semiconductor-metal interfaces; Surface morphology; Surface roughness; Surface treatment;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500904
