Title :
Silicon-Germanium (SiGe) composition and thickness determination via simultaneous smallspot XPS and XRF measurements
Author :
L´herron, Benoit ; Loubet, N. ; Qing Liu ; Wei Ti Lee ; Klare, Mark ; Pois, Heath ; Kwan, Mike ; Ying Wang ; Larson, Tom ; Farhat, Soha ; Fullam, Jennifer ; Gaudiello, John ; Rangarajan, Sampath ; Bing Sun ; Wacquez, R. ; Maitrejean, Sylvian
Author_Institution :
STMicroelectron., Albany, NY, USA
Abstract :
The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements. Measurements of SiGe films in various applications were explored. It is shown that the measurement is sensitive and linear over a much wider range of SiGe thickness, with excellent precision. Long term stability of the measurement is also shown to be very good.
Keywords :
Ge-Si alloys; X-ray fluorescence analysis; X-ray photoelectron spectra; films; thickness measurement; SiGe films; X-ray fluorescence measurements; measurement stability; silicon-germanium composition; simultaneous X-ray photoelectron measurements; simultaneous small- spot XPS measurements; simultaneous small- spot XRF measurements; thickness determination; Films; Metrology; Semiconductor device modeling; Silicon; Silicon germanium; Thickness measurement; X-ray scattering; SiGe; XPS; XRF;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2014.6846971
