Silicon-Germanium (SiGe) composition and thickness determination via simultaneous smallspot XPS and XRF measurements

Author

L´herron, Benoit ; Loubet, N. ; Qing Liu ; Wei Ti Lee ; Klare, Mark ; Pois, Heath ; Kwan, Mike ; Ying Wang ; Larson, Tom ; Farhat, Soha ; Fullam, Jennifer ; Gaudiello, John ; Rangarajan, Sampath ; Bing Sun ; Wacquez, R. ; Maitrejean, Sylvian

Author_Institution

STMicroelectron., Albany, NY, USA

fYear

2014

fDate

19-21 May 2014

Firstpage

26

Lastpage

30

Abstract

The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements. Measurements of SiGe films in various applications were explored. It is shown that the measurement is sensitive and linear over a much wider range of SiGe thickness, with excellent precision. Long term stability of the measurement is also shown to be very good.

Keywords

Ge-Si alloys; X-ray fluorescence analysis; X-ray photoelectron spectra; films; thickness measurement; SiGe films; X-ray fluorescence measurements; measurement stability; silicon-germanium composition; simultaneous X-ray photoelectron measurements; simultaneous small- spot XPS measurements; simultaneous small- spot XRF measurements; thickness determination; Films; Metrology; Semiconductor device modeling; Silicon; Silicon germanium; Thickness measurement; X-ray scattering; SiGe; XPS; XRF;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI

Conference_Location

Saratoga Springs, NY

Type

conf

DOI

10.1109/ASMC.2014.6846971

Filename

6846971