DocumentCode
1694104
Title
2nd generation 600V SiC Schottky diodes use merged pn/Schottky structure for surge overload protection
Author
Bjoerk, F. ; Hancock, J. ; Treu, M. ; Rupp, R. ; Reimann, T.
Author_Institution
Infineon Technol., Villach, Austria
fYear
2006
Abstract
A new generation of silicon carbide Schottky diodes has been developed which address surge current overload thermal runaway and lack of avalanche clamping by the use of a merged pn/Schottky diode structure. A PN structure with low ohmic contact is used in parallel with Schottky structure to greatly extend peak current handling and also provide avalanche energy capability without compromising dynamic performance.
Keywords
Schottky diodes; electric current; ohmic contacts; power semiconductor devices; silicon compounds; surge protection; 600 V; SiC Schottky diodes; avalanche clamping; merged pn/Schottky structure; ohmic contact; peak current handling; surge current overload thermal runaway; surge overload protection; Avalanche breakdown; Schottky diodes; Silicon carbide; Space vector pulse width modulation; Surge protection; Temperature; Testing; Thermal conductivity; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE
Print_ISBN
0-7803-9547-6
Type
conf
DOI
10.1109/APEC.2006.1620534
Filename
1620534
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