• DocumentCode
    1694212
  • Title

    Resistance changes of SnO2 thin films suitable for microelectronic gas sensors

  • Author

    Popova, L.I. ; Andreev, S.K. ; Gueorguiev, V.K. ; Manolov, E.B.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
  • Volume
    2
  • fYear
    1995
  • Firstpage
    581
  • Abstract
    A simple method for the separate estimation of the electrical sheet resistivity (ρs) and the contact resistivity (ρ c) is developed. The influence of an oxygen annealing on ρs and ρc of thin SnO2 layers with W/Al, Cr/Al and Ti/Al contacts is investigated as an illustration of the method. The method is applicable for evaluation of very high resistivity layers, because “potential” measurements are not needed
  • Keywords
    annealing; contact resistance; electrical resistivity; gas sensors; semiconductor thin films; tin compounds; Cr-Al; SnO2; SnO2 thin films; Ti-Al; W-Al; contact resistivity; electrical sheet resistivity; microelectronic gas sensors; oxygen annealing; resistance; Annealing; Artificial intelligence; Conductivity; Contact resistance; Gas detectors; Microelectronics; Semiconductor materials; Testing; Thin film sensors; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500931
  • Filename
    500931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1694212