Title :
Resistance changes of SnO2 thin films suitable for microelectronic gas sensors
Author :
Popova, L.I. ; Andreev, S.K. ; Gueorguiev, V.K. ; Manolov, E.B.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Abstract :
A simple method for the separate estimation of the electrical sheet resistivity (ρs) and the contact resistivity (ρ c) is developed. The influence of an oxygen annealing on ρs and ρc of thin SnO2 layers with W/Al, Cr/Al and Ti/Al contacts is investigated as an illustration of the method. The method is applicable for evaluation of very high resistivity layers, because “potential” measurements are not needed
Keywords :
annealing; contact resistance; electrical resistivity; gas sensors; semiconductor thin films; tin compounds; Cr-Al; SnO2; SnO2 thin films; Ti-Al; W-Al; contact resistivity; electrical sheet resistivity; microelectronic gas sensors; oxygen annealing; resistance; Annealing; Artificial intelligence; Conductivity; Contact resistance; Gas detectors; Microelectronics; Semiconductor materials; Testing; Thin film sensors; Tin;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500931
