Design and optimization of high Q RF passives on SOP-based organic substrates

Author

Dalmia, Sidharth ; Hobbs, Joseph Martin ; Sundaram, Venky ; Swaminathan, Madhavan ; Lee, Seock Hee ; Ayazi, Farrokh ; White, George ; Bhattacharya, Swapan

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

495

Lastpage

503

Abstract

Integration of passive devices such as inductors and capacitors in packages or on silicon is an important step towards miniaturization and reduction of cost. These passive devices are used as stand-alone components or form an integral part of filters, oscillators, amplifiers, mixers and other RF circuits. This paper discusses the design of high Q inductors and high Q capacitors in organic substrates. Inductors with maximum quality factors in the range of 60-180 were obtained at frequencies in the 1-3 GHz band for inductances in the range of 1 nH-20 nH. This is the first demonstration of such high Q inductors in organic substrates processed using low-temperature (<200°C) processes. The dimensions of all inductors are comparable to a low temperature co-fired ceramic (LTCC, <900°C) and multichip module deposition (400°C\n\n\t\t

Keywords

Q-factor; UHF devices; capacitors; inductors; low-temperature techniques; microwave devices; packaging; 1 to 3 GHz; 200 C; 400 to 500 C; 900 C; RF circuits; SOP-based organic substrates; amplifiers; capacitors; cost reduction; embedded capacitors; filters; high Q inductors high Q capacitors; high-Q RF passives; inductances; inductor performance; inductors; low temperature co-fired ceramic technology; low-temperature organic passive technology; low-temperature processes; miniaturization; mixers; multichip module deposition technology; oscillators; packages; passive device design; passive device optimization; process integration; quality factors; stand-alone components; Band pass filters; Capacitors; Ceramics; Costs; Design optimization; Inductors; Packaging; Q factor; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2002. Proceedings. 52nd

ISSN

0569-5503

Print_ISBN

0-7803-7430-4

Type

conf

DOI

10.1109/ECTC.2002.1008142

Filename

1008142