DocumentCode
1694404
Title
A review of n-channel SOI transistor models
Author
Jurczak, Malgorzata ; Jakubowski, A. ; Lukasiak, L.
Volume
2
fYear
1995
Firstpage
639
Abstract
A review of SOI MOSFET models based on 1-D solution of Poisson´s equation has been presented. The aim of this paper is to elucidate the influence of such effects as dependence of surface potential on the gate voltage in the strong inversion on I-V characteristics
Keywords
MOSFET; reviews; semiconductor device models; silicon-on-insulator; 1D solution; I-V characteristics; Poisson equation; SOI MOSFET models; Si; gate voltage; n-channel SOI transistor; review; strong inversion; surface potential; Circuit simulation; Computational modeling; Coupling circuits; MOSFET circuits; Poisson equations; Predictive models; Semiconductor films; Semiconductor process modeling; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500941
Filename
500941
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