Title :
A review of n-channel SOI transistor models
Author :
Jurczak, Malgorzata ; Jakubowski, A. ; Lukasiak, L.
Abstract :
A review of SOI MOSFET models based on 1-D solution of Poisson´s equation has been presented. The aim of this paper is to elucidate the influence of such effects as dependence of surface potential on the gate voltage in the strong inversion on I-V characteristics
Keywords :
MOSFET; reviews; semiconductor device models; silicon-on-insulator; 1D solution; I-V characteristics; Poisson equation; SOI MOSFET models; Si; gate voltage; n-channel SOI transistor; review; strong inversion; surface potential; Circuit simulation; Computational modeling; Coupling circuits; MOSFET circuits; Poisson equations; Predictive models; Semiconductor films; Semiconductor process modeling; Silicon; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500941
