• DocumentCode
    1694422
  • Title

    Avalanche phenomena in deeply depleted MOS capacitors

  • Author

    Rusu, A. ; Ionescu, A.M. ; Chovet, A.

  • Author_Institution
    Dept. of Electron., Politehnic Univ. of Bucharest, Romania
  • Volume
    2
  • fYear
    1995
  • Firstpage
    645
  • Abstract
    This paper investigates special cases of avalanche phenomena in deeply depleted SOI MOS structures. It is shown that, in the Zerbst-type experiment, the overshoot of the drain current can be related to impact ionization. In the pseudo-MOSFET experiment, the breakdown region of I DS vs. VDS characteristics is used for series resistances evaluation and doping type identification
  • Keywords
    MOS capacitors; avalanche breakdown; impact ionisation; transient analysis; Si; Zerbst-type experiment; avalanche phenomena; breakdown region; deeply depleted MOS capacitors; doping type identification; drain current overshoot; impact ionization; pseudo-MOSFET experiment; series resistances evaluation; Avalanche breakdown; Electric breakdown; Impact ionization; MOS capacitors; MOSFET circuits; Pulse generation; Semiconductor device doping; Silicon; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500942
  • Filename
    500942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1694422