DocumentCode :
169445
Title :
Challenges and opportunities in atomistic dopant profiling using capacitance-voltage measurements
Author :
Aghaei, Samira ; Hehta, Mohit ; Andrei, Petru ; Hagmann, Mark J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida State Univ., Tallahassee, FL, USA
fYear :
2014
fDate :
19-21 May 2014
Firstpage :
130
Lastpage :
135
Abstract :
This article investigates the effects of discrete dopant location and concentration on the differential capacitance of nanoscale metallic probes situated on the surface of semiconductor materials. Using the formalism of doping sensitivity functions, it is shown that the differential capacitance of such systems is particularly sensitive to the exact location and concentration of dopant atoms, which can potentially lead to the development of new techniques for atomistic 3-D dopant profiling. Such techniques require solving the inverse problem, in which we compute the 3-D dopant profile from the output capacitance-voltage characteristics of the system. This problem is mathematically challenging, but can be solved in principle using the formalism of doping sensitivity functions. In the final part of the presentation we present a number of sample simulations and analyze the challenges of this approach.
Keywords :
capacitance measurement; doping profiles; inverse problems; probes; semiconductor materials; voltage measurement; atomistic 3D dopant profiling; capacitance-voltage measurements; differential capacitance; discrete dopant concentration; discrete dopant location; dopant atoms; doping sensitivity functions; inverse problem; nanoscale metallic probes; semiconductor materials; Capacitance; Doping; Equations; Mathematical model; Probes; Semiconductor process modeling; Sensitivity; MOSC; Schottky contacts; atomistic effects; doping profiling; random doping fluctuations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Type :
conf
DOI :
10.1109/ASMC.2014.6847009
Filename :
6847009
Link To Document :
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