Title :
Defect engineering for carrier lifetime control in high voltage GaAs power diodes
Author :
Kozlov, V.A. ; Soldatenkov, F.Yu. ; Danilchenko, V.G. ; Korolkov, V.I. ; Shulpina, I.L.
Author_Institution :
Semicond. R&D Dept., FID Technol. Ltd. & Power Semicond. Ltd., St. Petersburg, Russia
Abstract :
The paper considers the physical basis for the technique of controllable defect formation at heterointerfaces and in the bulk of epitaxial GaAs layers in the process of isovalent doping. Results of studying crystal defects and their rearrangement depending on the isovalent doping modes in the process of epitaxial growth are presented. The main aspects of the defect influence on the charge carrier lifetime as well as on the diode structure blocking voltage are analyzed. Particular cases of the developed technique application for controllable defect formation in fabricating such GaAs-based devices as Hyper Fast Recovery Epitaxial Diodes and Drift Step Recovery Diodes are considered.
Keywords :
III-V semiconductors; carrier lifetime; crystal defects; epitaxial growth; epitaxial layers; gallium arsenide; power semiconductor diodes; semiconductor doping; semiconductor growth; GaAs; carrier lifetime control; charge carrier lifetime; controllable defect formation; crystal defects; defect engineering; diode structure blocking voltage; drift step recovery diodes; epitaxial GaAs layers; epitaxial growth; heterointerfaces; high voltage GaAs power diodes; hyper fast recovery epitaxial diodes; isovalent doping modes; Charge carrier lifetime; Crystals; Doping; Gallium arsenide; Schottky diodes; Switches; charge carrier lifetime; crystal defects; fast recovery epitaxial diode; gallium arsenide; isovalent doping; liquid phase epitaxy; rise time; step recovery diode; turn-off time;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2014.6847011