Title :
Problems in modelling multiterminal bipolar devices
Author :
Leone, A. ; Masetti, G. ; Graffi, S.
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
The circuit simulation of multiterminal bipolar devices must account for parasitic devices. Abrupt changes of the substrate potential can bias the parasitics in forward or reverse normal region with possible positive feedback regenerative processes that can damage the device. The correct behaviour of bipolar junction transistor operating in reverse region can not be correctly characterized by the Gummel-Poon model. This work introduces an integration of the basic Gummel-Poon structure able to model the correct shape of the reverse current gain over large variation of the bias voltage
Keywords :
bipolar transistors; circuit analysis computing; semiconductor device models; Gummel-Poon structure; bias voltage; bipolar junction transistor; circuit simulation; modelling; multiterminal bipolar devices; parasitic devices; positive feedback regenerative processes; reverse current gain; reverse region; substrate potential; Bipolar transistors; Circuit simulation; Doping; Feedback; Power transistors; Predictive models; Semiconductor process modeling; Shape; Substrates; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500947
