Title :
New investigation on silicon bipolar transistor at low temperature
Author :
Zhixiong, Xiao ; Tongli, Wei
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
The intrinsic carrier concentration has been calculated with the non-parabolic energy bands at low temperature. The current gain of silicon bipolar transistor has been quantitatively modeled at 77 K and 300 K, and the temperature dependence of the mean non-ideal coefficient of base current has been analyzed. The obtained results are in agreement with the experimental data
Keywords :
band structure; bipolar transistors; carrier density; cryogenic electronics; elemental semiconductors; semiconductor device models; silicon; 77 to 300 K; Si; base current; bipolar transistor; intrinsic carrier concentration; low temperature operation; nonparabolic energy bands; Bipolar transistors; Current density; Doping; Microelectronics; Photonic band gap; Physics; Proximity effect; Silicon; Space charge; Temperature dependence;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500953
