DocumentCode
169474
Title
Extending dry pump reliability on high-k ALD furnaces
Author
Nishimura, Kosuke ; Boger, Maiku ; Ito, Kei
Author_Institution
Edwards Ltd., Yachiyo, Japan
fYear
2014
fDate
19-21 May 2014
Firstpage
306
Lastpage
309
Abstract
The industry, today, makes use of high-k dielectric films deposited using ALD. Early introduction of these processes into high volume manufacture identified dry pump reliability to be a key concern. Careful investigation of the exchanged pumps and analysis of the issues allowed for better understanding of the likely failure mechanisms. Changing the pump mechanism from that used in the original pumps resulted in extending the service interval four to six times that originally experienced. More than temperature changes or purge adjustments, a fundamental change to the pump structure yielded the most positive results.
Keywords
atomic layer deposition; batch processing (industrial); electronic equipment manufacture; high-k dielectric thin films; semiconductor device reliability; semiconductor technology; vacuum pumps; atomic layer deposition; dry pump reliability; high volume manufacture; high-k ALD furnaces; high-k dielectric films; Furnaces; Gases; High K dielectric materials; Liquids; Metals; Powders; Rotors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location
Saratoga Springs, NY
Type
conf
DOI
10.1109/ASMC.2014.6847026
Filename
6847026
Link To Document