DocumentCode
1694814
Title
Nonlinear and transient microwave and RF modeling of the PIN diode
Author
Caverly, Robert H. ; Phaneuf, Gail
Author_Institution
Dept. of Electr. & Comput. Eng., Southeastern Massachusetts Univ., North Dartmouth, MA, USA
fYear
1989
Firstpage
2209
Abstract
Models for analyzing the PIN diode in switch, attenuator, and limiter applications are presented. A nonlinear forward-bias model is outlined. The resulting nonlinear transfer functions are evaluated out to third order and discussed in terms of distortion intercept points for series- and shunt-mounted PIN diodes. The model is compared with series circuit experimental data. A transient PIN diode model is introduced and used to study the effects of operating frequency and diode geometry on limiting characteristics
Keywords
p-i-n diodes; semiconductor device models; solid-state microwave devices; transfer functions; transient response; PIN diode; RF modeling; attenuator; distortion intercept points; limiter applications; nonlinear forward-bias model; nonlinear transfer functions; p-i-n diodes; series mounted diodes; shunt mounted diodes; switch; transient microwave modelling; Attenuators; Circuits; Diodes; High definition video; Impedance; Nonlinear distortion; Radio frequency; Solid modeling; Switches; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1989., IEEE International Symposium on
Conference_Location
Portland, OR
Type
conf
DOI
10.1109/ISCAS.1989.100816
Filename
100816
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