DocumentCode
169485
Title
Surface treatment against bromine defectivity in plasma etch reactor
Author
Yoann, Goasduff ; Nguyen, Minh-Khai ; Patrice, Laurens ; Distefano, Giuseppe
Author_Institution
Plasma etch Eng. Group, ST Microelectron., Rousset, France
fYear
2014
fDate
19-21 May 2014
Firstpage
326
Lastpage
329
Abstract
This paper evaluates two treatment processes to reduce HBr in plasma etch reactor. The bromine concentration is measured by a total X-Ray fluorescence (TXRF) technique. The first treatment is based on an outgassing effect by heating and the second on a plasma etch surface treatment. Both treatments can lead to a reduction by a factor 20 of the bromine concentration. The electrical impact of the plasma needs to be evaluated.
Keywords
X-ray fluorescence analysis; bromine; hydrogen compounds; outgassing; sputter etching; HBr; TXRF technique; bromine concentration; bromine defectivity; outgassing effect; plasma etch reactor; plasma etch surface treatment; surface treatment processes; total X-ray fluorescence technique; Fluorescence; Inductors; Plasma measurements; Plasmas; Pollution measurement; Resists; Surface treatment; HBr; TXRF; etching; plasma; surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location
Saratoga Springs, NY
Type
conf
DOI
10.1109/ASMC.2014.6847030
Filename
6847030
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