Title :
0.4 watt X-band quasimonolithic amplifier-design, results, comparative analysis of simulating methods
Author_Institution :
Joint Stock Co. Oktava, Novosibirsk
fDate :
6/21/1905 12:00:00 AM
Abstract :
The development of the new X-band electronics systems needs amplifiers with output power of 0.3-0.4 W, reliable, not so costly, with small weight and dimensions. This paper concerns design and measured characteristics of experimental quasimonolithic amplifier (QMAMP) with the output power of 0.4 W and the power gain of 12-16 dB in the frequency band 9-12 GHz, and gives comparative analysis of the results of using the small signal S-parameters and the time domain large signal approaches in the design of GaAs power amplifiers
Keywords :
III-V semiconductors; MESFET circuits; gallium arsenide; microwave power amplifiers; 0.4 W; 12 to 16 dB; 9 to 12 GHz; GaAs; GaAs MESFET; X-band electronics; design; power amplifier; quasimonolithic amplifier; simulation; small-signal S-parameters; time-domain large-signal model; Frequency measurement; Gain measurement; Power amplifiers; Power generation; Power measurement; Power system reliability; Scattering parameters; Signal analysis; Signal design; Time measurement;
Conference_Titel :
High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0270-9
DOI :
10.1109/MIAME.1999.827807
