Title :
1.52-1.59 μm range different-wavelength modulator-integrated DFB-LDs fabricated on a single wafer
Author :
Kudo, K. ; Ishizaka, M. ; Sasaki, T. ; Yamazaki, H. ; Yamaguchi, M.
Author_Institution :
Opto-Electron. & High-Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
The lasing wavelength of the 40-channel different-wavelength modulator-integrated MQW DFB-LDs that we fabricated on a wafer covered almost all of the expanded EDFA gain band from 1.527 to 1.593 μm. The device provided uniform, high-performance characteristics such as a threshold current of less than 12 mA and transmission of 2.5 Gb/s-600 km
Keywords :
quantum well lasers; 1.52 to 1.59 mum; 12 mA; 2.5 Gbit/s; 40-channel; different-wavelength modulator-integrated DFB-LDs; different-wavelength modulator-integrated MQW DFB-LDs; expanded EDFA gain band; high-performance characteristics; lasing wavelength; optical fabrication; single wafer; threshold current;
Conference_Titel :
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location :
Edinburgh
Print_ISBN :
0-85296-697-0
DOI :
10.1049/cp:19971609
