Optimization of high-voltage RF power SiGe transistors for cellular applications [HBTs]

Author

Bengtsson, Olof ; Johansson, Torbjorn ; Nordlander, Edvard ; Rydberg, Anders

Author_Institution

Dept. of Technol. Electron., Univ. of Gavle, Sweden

fYear

1999

fDate

6/21/1905 12:00:00 AM

Abstract

The base profile design for high-voltage RF power silicon transistors with epitaxial SiGe base was studied using 2-D process and device simulations. The addition of Ge in the base makes thin base widths with very high base doping possible. This gives rise to a higher maximum oscillation frequency thus improving the critical power gain for these devices

Keywords

Ge-Si alloys; UHF bipolar transistors; cellular radio; heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor doping; semiconductor materials; 2D process; HBTs; SiGe; base doping; base profile design; cellular applications; critical power gain; device simulations; high-voltage RF power transistor; maximum oscillation frequency; thin base widths; BiCMOS integrated circuits; Doping; Frequency estimation; Germanium silicon alloys; Heterojunction bipolar transistors; RF signals; Radio frequency; Signal design; Signal processing; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference

Conference_Location

Novosibirsk

Print_ISBN

5-7782-0270-9

Type

conf

DOI

10.1109/MIAME.1999.827839

Filename

827839