DocumentCode :
1696461
Title :
Circuit simulation models for the high electron mobility
Author :
Cioffi, K.R. ; Kang, S.M. ; Trick, T.N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear :
1988
Firstpage :
405
Abstract :
Two charge-based circuit simulation models are presented for the HEMT. One is somewhat empirically based and is termed the semiempirical model whereas the other is based on the device physics and is called the semiphysical model. Both models have been installed in the SPICE-like circuit simulation program iSMILE. In the semiempirical model, an analytical term is introduced to describe the mobility vs. gate voltage variation. Also included in this model is a method of partitioning the channel charge. The semiphysical model incorporates an analytical term for describing the gate-to-channel potential vs. channel charge characteristic. In addition, equations are presented for modeling device parasitics and the voltage-dependent fringe capacitances of the gate. Both models are shown to be more numerically efficient and more accurate than previous capacitance-based models.<>
Keywords :
digital simulation; high electron mobility transistors; semiconductor device models; HEMT; SPICE-like circuit simulation; channel charge; charge-based circuit simulation models; device parasitics; device physics; gate voltage; high electron mobility; iSMILE; partitioning; semiempirical model; semiphysical model; voltage-dependent fringe capacitances; Circuit simulation; Convergence; Electron mobility; Equations; Gallium arsenide; HEMTs; MOSFETs; Molecular beam epitaxial growth; Parasitic capacitance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo, Finland
Type :
conf
DOI :
10.1109/ISCAS.1988.14950
Filename :
14950
Link To Document :
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