DocumentCode :
1696633
Title :
Nanomechanical structures with an integrated carbon nanotube
Author :
Miyashita, H. ; Ono, T. ; Esashi, M.
Author_Institution :
Graduate Sch. of Eng., Tohoku Univ., Sendai, Japan
Volume :
1
fYear :
2003
Firstpage :
182
Abstract :
In this paper, we report the fabrication method of a freestanding carbon nanotube (CNT) bridged between opposed silicon electrodes with a narrow gap (0.5/spl sim/5 /spl mu/m), which was fabricated by a silicon micromachining technique. After the metallization of nickel (Ni) or iron (Fe) as a catalyst for CNT growth, the CNT was grown between these electrodes with an application of the voltage of 30V during the growth by hot-filament chemical vapor deposition (HF-CVD) using acetylene diluted by hydrogen, as a source gas. The CNT was grown from the negative electrode to another one. From the measurement of current-voltage (I-V) characteristics the contact between the CNT and the silicon electrode shows ohmic behavior and the resistivity of the CNT was estimated to be about 4/spl times/10/sup -5/ /spl Omega//spl middot/cm. This nanofabrication technique will be applicable to the nanomechanical elements integrated an individual CNT.
Keywords :
carbon nanotubes; chemical vapour deposition; electrical resistivity; electrochemical electrodes; elemental semiconductors; metallisation; micromachining; nanotechnology; nanotube devices; silicon; 30 V; 4/spl times/10/sup -5/ ohmcm; C:Si; CNT growth; acetylene; current-voltage characteristics; electrical resistivity; hot-filament chemical vapor deposition; hydrogen; integrated carbon nanotube; iron catalyst; metallization; nanofabrication technique; nanomechanical elements; nanomechanical structures; negative electrode; nickel catalyst; ohmic behavior; silicon electrodes; silicon micromachining technique; source gas; Carbon nanotubes; Electrodes; Fabrication; Iron; Metallization; Micromachining; Nanostructures; Nickel; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
Type :
conf
DOI :
10.1109/SENSOR.2003.1215283
Filename :
1215283
Link To Document :
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