Title :
Localized synthesis of silicon nanowires
Author :
Englander, O. ; Christensen, D. ; Mu Chiao ; Jongbaeg Kim ; Lin, L.
Author_Institution :
Berkely Sensor and Actuator Center, California Univ., Berkeley, CA, USA
Abstract :
Localized resistive heating of microstructures has been used to activate vapor-deposition synthesis of silicon nanowires in a room-temperature chamber. The process is localized, selective, scalable and compatible with on-chip microelectronics and, in addition, removes necessity of post-synthesis assembly of nanowires to accomplish integrated nano-electromechanical systems. Synthesized nanowires with dimensions of 30-80 nm in diameter and up to 10 /spl mu/m in length have been successfully demonstrated and growth rates of up to 1/spl mu/m/min have been observed. This new class of manufacturing method enables direct integration of nanotechnology with larger-scale systems for potential sensing and actuation applications.
Keywords :
CMOS integrated circuits; crystal microstructure; elemental semiconductors; nanotechnology; nanowires; semiconductor growth; silicon; vapour deposition; 10 micron; 293 to 298 K; 30 to 80 nm; Si; localized resistive heating; microstructures; nanoelectromechanical systems; nanotechnology; on-chip microelectronics; potential sensing; room-temperature; silicon nanowires; vapor-deposition; Fabrication; Heating; Microelectronics; Micromechanical devices; Microstructure; Nanowires; Silicon on insulator technology; Solids; Temperature; Wet etching;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215284
