Title :
High purity AlGaAs grown by molecular beam epitaxy
Author :
Zhuravlev, K.S. ; Toropov, A.I. ; Shamirzaev, T.S. ; Bakarov, A.K. ; Rakov, Yu.N. ; Myakishev, Yu.B.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
6/21/1905 12:00:00 AM
Abstract :
We report the growth and photoluminescence of very high quality Al xGa1-xAs layers grown by molecular beam epitaxy over the 0<x<0.38 composition range. Heterostructure doped-channel FETs manufactured on pseudomorphic AlGaAs/InGaAs/GaAs heterostructures containing this layer have output power of about 1 W/mm with 7.8 dB gain and 60% power-added efficiency at 18 GHz
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; 18 GHz; 7.8 dB; AlGaAs-InGaAs-GaAs; gate breakdown voltage; heterostructure doped-channel FET; molecular beam epitaxy; output power; photoluminescence; power-added efficiency; pseudomorphic heterostructures; Ambient intelligence; FETs; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Physics; Power generation; Semiconductor device manufacture; Substrates;
Conference_Titel :
High Power Microwave Electronics: Measurements, Identification, Applications, 1999. MIA-ME '99. Proceedings of the IEEE-Russia Conference
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0270-9
DOI :
10.1109/MIAME.1999.827849
