Title :
A monolithic integrated optoelectronic photoreceiver using an MSM detector
Author :
Morikuni, J.J. ; Tong, M.H. ; Nummila, K. ; Seo, J.-W. ; Ketterson, A.A. ; Kang, S.-M. ; Adesida, I.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
A high-speed monolithic optoelectronic photoreceiver designed specifically for optical interconnections is described. The photoreceiver uses an enhancement-depletion process rather than the conventional D-only technology, and is based on the pseudomorphic (lattice-mismatched) AlGaAs/InGaAs/GaAs materials system. An MSM (metal-semiconductor-metal) photodetector is integrated with a modulation-doped FET (MODFET) transimpedance amplifier, thus accomplishing both photodetection and preamplification, monolithically. The measured 3-dB bandwidth of the receiver ranges from 5.4 GHz at a gain of 31 dB to 2.0 GHz at 60 dB. From the measured 110-ps (FWHM) output pulse, the optical bandwidth is calculated to be 1.0 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; optical receivers; photodetectors; 1 to 5.4 GHz; 110 ps; 31 to 60 dB; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs materials system; MODFET; MSM detector; enhancement-depletion process; high-speed OEIC; lattice-mismatched; metal-semiconductor-metal; modulation-doped FET; monolithic integrated optoelectronic photoreceiver; optical interconnections; photodetector; preamplification; pseudomorphic material system; transimpedance amplifier; Bandwidth; Gallium arsenide; Indium gallium arsenide; Integrated optoelectronics; Optical design; Optical interconnections; Optical materials; Optical receivers; Pulse amplifiers; Pulse measurements;
Conference_Titel :
Solid-State Circuits Conference, 1993. Digest of Technical Papers. 40th ISSCC., 1993 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0987-1
DOI :
10.1109/ISSCC.1993.280007
