DocumentCode :
1696858
Title :
Static paralleling of power MOSFETs in thermal equilibrium
Author :
López, Toni ; Elferich, Reinhold
Author_Institution :
Philips Res. Labs., Aachen, Germany
fYear :
2006
Abstract :
In automotive applications, sub-systems that used to be driven mechanically or hydraulically increasingly become electrically powered. The required inverters that feed such systems use parallel-connected power MOSFETs to switch hundreds of amperes. This paper investigates the static issues of paralleling MOSFETs, particularly the worst-case scenarios leading to the maximum temperature rise in the devices. A static electro-thermal MOSFET model is employed to describe current sharing and temperature rise for the general case of an arbitrary number of parallel devices. Analytical expressions are obtained to derive the worst-case conditions of the MOSFETs. Thus, designers can benefit from it to guarantee reliable circuit.
Keywords :
automotive electronics; power MOSFET; semiconductor device models; automotive applications; current sharing; power MOSFET; static electrothermal MOSFET model; static paralleling; temperature rise; thermal equilibrium; Automotive applications; Circuits; Costs; Feeds; Inverters; Laboratories; MOSFETs; Power system modeling; Switches; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE
Print_ISBN :
0-7803-9547-6
Type :
conf
DOI :
10.1109/APEC.2006.1620637
Filename :
1620637
Link To Document :
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