Title :
Infrared and ultrasonic sensors using ferroelectric thin films
Author :
Okuyama, M. ; Yamashita, K. ; Noda, M.
Author_Institution :
Graduate Sch. of Eng. Sci., Osaka Univ., Toyonaka, Japan
Abstract :
Infrared and Ultrasonic sensors have been fabricated by using ferroelectric thin films on diaphragms of Si wafer. Si membranes plays as thermally isolated substrate in the infrared sensor and vibrating substrate in the ultrasonic sensor. Infrared and positional image can be obtained by using their sensor arrays.
Keywords :
barium compounds; diaphragms; elemental semiconductors; ferroelectric materials; ferroelectric thin films; infrared detectors; membranes; permittivity; silicon; strontium compounds; ultrasonic devices; vibrations; Ba/sub 1-x/Sr/sub x/TiO/sub 3/; Si; Si membranes; Si wafer diaphragms; ferroelectric thin films; infrared sensors; thermally isolated substrate; ultrasonic sensors; vibrating substrate; Binary search trees; Dielectric constant; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Infrared sensors; Semiconductor thin films; Sensor arrays; Temperature sensors; Thin film sensors;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215294
