Title :
Larger-than-Vdd forward body bias in sub-0.5V nanoscale CMOS
Author :
Ananthan, Hari ; Kim, Chris H. ; Roy, Kaushik
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
This paper examines the effectiveness of larger-than-Vdd forward body bias (FBB) in nanoscale bulk CMOS circuits where Vdd is expected to scale below 0.5V. Equal-to and larger-than Vdd FBB schemes offer unique advantages over conventional FBB such as simple design overhead and reverse body bias capability respectively. Compared to zero body bias, they improve process-variation immunity and achieve 71% and 78% standby leakage savings at iso performance and iso active power at room temperature. We also suggest a novel temperature-adaptive body bias scheme to control active leakage and achieve 22% and 40% active power savings at higher temperatures.
Keywords :
CMOS digital integrated circuits; integrated circuit design; leakage currents; low-power electronics; nanoelectronics; active leakage; active power savings; larger-than-Vdd forward body bias; nanoscale bulk CMOS circuits; process variations; process-variation immunity; reverse body bias capability; simple design overhead; standby leakage savings; sub-threshold leakage; technology scaling; temperature-adaptive body bias; CMOS logic circuits; Immune system; Logic circuits; Logic design; MOS devices; MOSFET circuits; Permission; Power MOSFET; Temperature control; Threshold voltage;
Conference_Titel :
Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
1-58113-929-2
DOI :
10.1109/LPE.2004.1349299
