Title :
25 to 40 Gb/s Si ICs in selective epitaxial bipolar technology
Author :
Felder, A. ; Stengl, R. ; Hauenschild, J. ; Rein, H.-M. ; Meister, T.F.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
High-speed digital ICs as decision circuits, time-division multiplexers (MUX), demultiplexers (DEMUX), and frequency dividers are key components for multigigabit-per-second optical-fiber links. While advanced silicon bipolar technology meets the demands for all electronic components of 10-Gb/s direct detection transmission links now in development, there is a question whether the situation will change at transmission rates of 20 Gb/s. The authors try to answer this question by presenting the above key components with record operating speeds. A silicon bipolar technology with selective epitaxial growth (SEG) of the active base and collector regions is used for circuit fabrication. A static 16:1 low-power frequency divider demonstrates the low-power capability of the SEG technology. All measured data rates and frequencies are significantly higher than reported values for silicon ICs and, with one exception, even for III-V ICs. The 40 Gb/s measured with the DEMUX is the highest data rate achieved with an IC in any technology.<>
Keywords :
bipolar integrated circuits; demultiplexing equipment; digital communication systems; digital integrated circuits; elemental semiconductors; epitaxial growth; frequency dividers; multiplexing equipment; optical communication equipment; silicon; time division multiplexing; 25 to 40 Gbit/s; SEG technology; Si; circuit fabrication; decision circuits; demultiplexers; digital ICs; direct detection transmission links; frequency dividers; low-power capability; multigigabit-per-second optical-fiber links; selective epitaxial bipolar technology; selective epitaxial growth; time-division multiplexers; Circuits; Electronic components; Epitaxial growth; Fabrication; Frequency conversion; High speed optical techniques; Multiplexing; Optical devices; Optical frequency conversion; Silicon;
Conference_Titel :
Solid-State Circuits Conference, 1993. Digest of Technical Papers. 40th ISSCC., 1993 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0987-1
DOI :
10.1109/ISSCC.1993.280017